Magnetism and Superconductivity in a Two-band Hubbard Model in Infinite Dimensions

We study a two-band Hubbard model using the dynamical mean-field theory combined with the exact diagonalization method. At the electron density $n=2$, a transition from a band-insulator to a correlated semimetal occurs when the on-site Coulomb interaction $U$ is varied for a fixed value of the charge-transfer energy $\Delta$. At low temperature, the correlated semimetal shows ferromagnetism or superconductivity. With increasing doping $|n-2|$, the ferromagnetic transition temperature rapidly decreases and finally becomes zero at a critical value of $n$. The second-order phase transition occurs at high temperature, while a phase separation of ferromagnetic and paramagnetic states takes place at low temperature. The superconducting transition temperature gradually decreases and finally becomes zero near $n=1$ ($n=3$) where the system is Mott insulator which shows antiferromagnetism at low temperature.Comment: 3 pages, 5 figures, proceedings of the International Conference on Strongly Correlated Electrons with Orbital Degrees of Freedom (ORBITAL2001

Functional organic materials for electronics industries

Topics closely related with organic, high molecular weight material synthesis are discussed. These are related to applications such as display, recording, sensors, semiconductors, and I.C. correlation. New materials are also discussed. General principles of individual application are not included. Materials discussed include color, electrochromic, thermal recording, organic photoconductors for electrophotography, and photochromic materials

First-Principles Study on Electron-Conduction Properties of C60_{60} Chains

The electron-conduction properties of fullerene chains are examined by first-principles calculations based on the density functional theory. The conductivity of the C$_{60}$ dimer is low owing to the constraint of the junction of the molecules on electron conduction, whereas the C$_{60}$ monomer exhibits a conductance of $\sim$ 1 G$_0$. One of the three degenerate $t_{u1}$ states of C$_{60}$ is relevant to conduction and the contributions of the others are small. In addition, we found a more interesting result that the conductance of the fullerene chain is drastically increased by encapsuling metal atoms into cages.Comment: 10pages and 5 figure

New structural model for GeO2/Ge interface: A first-principles study

First-principles modeling of a GeO2/Ge(001) interface reveals that sixfold GeO2, which is derived from cristobalite and is different from rutile, dramatically reduces the lattice mismatch at the interface and is much more stable than the conventional fourfold interface. Since the grain boundary between fourfold and sixfold GeO2 is unstable, the sixfold GeO2 forms a large grain at the interface. On the contrary, a comparative study with SiO2 demonstrates that SiO2 maintains a fourfold structure. The sixfold GeO2/Ge interface is shown to be a consequence of the ground-state phase of GeO2. In addition, the electronic structure calculation reveals that sixfold GeO2 at the interface shifts the valence band maximum far from the interface toward the conduction band.Comment: 18 pages, 5 figures, and 2 table

A critical examination of discrete lattice and dispersed barrier hardening

Critical assessment of discrete lattice and dispersed barrier hardening theories of thermally activated deformation of metal

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices.Comment: 4 pages, 4 figure

On the p-adic geometry of traces of singular moduli

The aim of this article is to show that p-adic geometry of modular curves is useful in the study of p-adic properties of traces of singular moduli. In order to do so, we partly answer a question by Ono. As our goal is just to illustrate how p-adic geometry can be used in this context, we focus on a relatively simple case, in the hope that others will try to obtain the strongest and most general results. For example, for p=2, a result stronger than Thm.1 is proved in [Boylan], and a result on some modular curves of genus zero can be found in [Osburn] . It should be easy to apply our method, because of its local nature, to modular curves of arbitrary level, as well as to Shimura curves.Comment: 3 pages, Late